Discrete Semiconductor Selection Guide دیتاشیت

Discrete Semiconductor Selection Guide

مشخصات دیتاشیت

نام دیتاشیت Discrete Semiconductor Selection Guide
حجم فایل 8745.626 کیلوبایت
نوع فایل pdf
تعداد صفحات 61

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مشخصات فنی

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
  • Base Part Number: 2N70
  • detail: N-Channel 60V 310mA (Ta) 250mW (Ta) Surface Mount SC-75